absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 20 i d @ v gs = 10v, t c = 100c continuous drain current 12 i dm pulsed drain current 80 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 78 mj i ar avalanche current 12 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 3.0 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temp 300 (for 5s) weight 1.0 (typical) g c a www.irf.com 1 product summary part number bv dss r ds(on) i d irf5nj3315 150v 0.08 ? 20a
hexfet ? power mosfet irf5nj3315 surface mount (smd-0.5) 150v, n-channel fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. features: low r ds(on) avalanche energy ratings dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed surface mount light weight smd-0.5 pd-94287b
irf5nj3315 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 c/w note: corresponding spice and saber models are available on international rectifier website.
source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 20 i sm pulse source current (body diode) ?? 80 v sd diode forward voltage ? ? 1.3 v t j = 25c, i s = 12a, v gs = 0v t rr reverse recovery time ? ? 260 ns t j = 25c, i f = 12a, di/dt 100a/ s q rr reverse recovery charge ? ? 1.7 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 150 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.18 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.08 ? v gs = 10v, i d = 12a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250 a g fs forward transconductance 12 ? ? s v ds = 15v, i ds = 12a i dss zero gate voltage drain current ? ? 25 v ds = 150v ,v gs =0v ? ? 250 v ds = 120v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 95 v gs =10v, i d = 12a q gs gate-to-source charge ? ? 11 nc v ds = 120v q gd gate-to-drain (?miller?) charge ? ? 47 t d (on) turn-on delay time ? ? 25 v dd = 75v, i d = 12a, t r rise time ? ? 60 v gs =10v, r g = 5.1 ? t d (off) turn-off delay time ? ? 75 t f fall time ? ? 60 l s + l d total inductance ? 4.0 ? measured from the center of drain pad to center of source pad c iss input capacitance ? 1370 ? v gs = 0v, v ds = 25v c oss output capacitance ? 300 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 160 ? na nh ns a
www.irf.com 3 irf5nj3315 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 20a
irf5nj3315 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 12a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 0.4 0.8 1.2 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s dc
www.irf.com 5 irf5nj3315 fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature
1 0.1 % + - v gs v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j - p c b ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2
irf5nj3315 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs t p v (br)dss i as d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.4a 7.6a bottom 12a
www.irf.com 7 irf5nj3315 repetitive rating; pulse width limited by maximum junction temperature. i sd 12a, di/dt 120a/ s, v dd 150v, t j 150c pulse width 300 s; duty cycle 2% v dd = 50v, starting t j = 25c, l= 1.1 peak i as = 12a, v gs =10v, r g = 25 ? footnotes: case outline and dimensions ? smd-0.5 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/2010 1 = drain 2 = gate 3 = source pad assignments
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